Band structure tuning of doped Graphene/hBN heterostructure

ORAL

Abstract

Tuning Dirac electrons by a periodic potential is an important scientific question and graphene/h-BN is a model van der Waals heterostructure for investigating this. Here we report our recent ARPES progress on the electronic band structure of doped graphene/BN, which shows intriguing band structure engineering of both the valence and conduction bands.

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Presenters

  • Hongyun Zhang

    • Department of Physics, Tsinghua Univ
    • Tsinghua University

Authors

  • Hongyun Zhang

    • Department of Physics, Tsinghua Univ
    • Tsinghua University

  • Eryin Wang

    • Tsinghua University

  • Shuopei Wang

    • Chinese Academy of Science

  • Xiaobo Lu

    • Beijing National Laboratory for Condensed Matter Physics, Beijing, China
    • Chinese Academy of Science
    • Physics, Washington University in St. Louis

  • Jonathan Denlinger

    • ALS, Lawrence Berkeley National Laboratory
    • Lawrence Berkeley National Laboratory
    • Lawrence Berkeley National Labotatory
    • Advanced Light Source, Lawrence Berkeley National Laboratory
    • Lawrence Berkeley Natl Lab

  • Alexei V Fedotov

    • Lawrence Berkeley National Labotatory

  • Takashi Taniguchi

    • National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305 0044, Japan
    • National Institute for Materials Science
    • Advanced Materials Laboratory, National Institute for Materials Science, , 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044
    • National Institute of Materials Science
    • NIMS, Japan
    • Advanced Materials Laboratory, NIMS
    • National Institute for Materials Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science
    • National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
    • National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0044, Japan
    • National Institute for Materials Science (NIMS)
    • NIMS Tsukuba
    • NIMS
    • National Institute for Material Science
    • National Institute for Materials Science, Japan
    • National Institute for Materials Science, 1-1 Namiki, Tsukuba, Japan
    • National Institute for Materials Science , Japan
    • Advanced Materials Laboratory, National Institute for Materials Science, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
    • National Institute for Materials Science, Tsukuba, Ibaraki 305- 0044, Japan
    • National Institute for Material Science - Japan
    • National Institute for Materials Science, Namiki Tsukuba Ibaraki, Japan
    • National Institute of Material Science
    • Advanced Material Lab, NIMS
    • Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan
    • Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki, Japan
    • National Institute for Materials Science, Tsukuba
    • 1-1 Namiki, Tsukuba, National Institute for Materials Science
    • NIMS/Tsukuba
    • National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
    • National Institute for Materials Science, Namiki, 305-0044, Japan
    • National Institute for Material Science, Japan
    • Advanced Materials Laboratory, NIMS, Japan
    • Advanced Materials Labaratory, National Institute for Materials Science
    • National Institute of Material Science, 1-1 Namiki, Tsukuba, Ibaraki 205-0044, Japan
    • National Institute of Materials Science, Japan

  • Guangyu Zhang

    • Beijing National Laboratory for Condensed Matter Physics, Beijing, China
    • Chinese Academy of Science

  • Shuyun Zhou

    • Department of Physics, Tsinghua University
    • Department of Physics, Tsinghua Univ
    • Physics, Tsinghua University
    • Tsinghua University
    • Physics, Tsing Hua University