Andreev bound states and Fabry-Perot interference in InAsSb nanowires

ORAL

Abstract

Andreev bound states (ABSs) are electronic analogues of Fabry-Perot interference. Signatures of Majorana zero modes have been demonstrated as merging of electron and hole ABSs as well as zero bias conductance peaks. We take the bottom-up route to study the ABSs and Fabry-Perot interference in InAsSb nanowires. The superconductor-InAsSb-superconductor device shows induced hard superconducting gap in the quantum dot regime. The g factor is extracted consistently from the evolution of both the excited states and the Kondo effect in magnetic field. Moreover, the device can be driven to the Fabry-Perot interference regime where ABSs are observed.

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Presenters

  • Fanming Qu

    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics

Authors

  • Fanming Qu

    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics

  • Jiangbo He

    • Institute of Physics, Chinese Academy of Sciences

  • Jianghua Ying

    • Institute of Physics, Chinese Academy of Sciences

  • Guangtong Liu

    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics

  • Jie Fan

    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics

  • Zhongqing Ji

    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics

  • Dong Pan

    • Institute of Semiconductors, Chinese Academy of Sciences

  • Jianhua Zhao

    • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences
    • Institute of Semiconductors, Chinese Academy of Sciences

  • Li Lu

    • Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
    • Institute of Physics, Chinese Academy of Sciences
    • institute of physics