Working principles of the short-period superlattice structure in GaAs quantum wells
ORAL
Abstract
We present the design rules of GaAs quantum wells that utilize the short-period superlattice (SPSL) structure to achieve a two dimensional electron system (2DES). By changing growth conditions such as doping density, barrier composition, and well width within the SPSL, we show that the density of the 2DES can be tuned from 2.0 x 1011 cm-2 to 4.5 x 1011 cm-2 even with a fixed spacer thickness. This implies we can prepare samples that have quite different 2DES density but rather similar scattering conditions. The magnetotransport is analyzed in detail and the influence of the change in 2DES density is discussed, with an emphasis on the strength of the fraction quantum Hall states.
*Work supported by the NSF (Grants DMR 1709076, ECCS 1508925, and MRSEC DMR 1420541), the DOE Basic Energy Sciences (Grant DE-FG02-00-ER45841), and the Gordon and Betty Moore Foundation (Grant GBMF4420).
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Presenters
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Edwin Chung
- Princeton University