Full 300mm fin based QD device characterization ORAL
Abstract Intel’s efforts towards the fabrication of spin qubit devices have required a comprehensive device characterization, from transistors and quantum dots, to qubits, which have been co-fabricated in the same die/wafer. In this talk, we will present an in-depth device characterization, and the results from quantum dot devices manufactured in a full 300mm line. We will give details of the fin based process flow which yields high charging energy devices. The extraction of QD related figures of merit from room and low temperature testing (1.6K) are part of the method to rapidly screen 300mm wafers with thousands of devices which are used to determine the spin qubit devices that will be taken to the milli-kelvin measurements; keeping up with the pace of the 300mm fab output.
March 6, 2019, 2:30 PM – March 6, 2019, 2:42 PM
Presenters Hubert C George
Components Research, Intel Corporation Authors Hubert C George
Components Research, Intel Corporation Nicole Thomas
Components Research, Intel Corporation Ravi Pillarisetty
Components Research, Intel Corporation Lester Lampert
Components Research, Intel Components Research, Intel Corporation Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR, 97124, USA Thomas Watson
Components Research, Intel Corporation Jeanette Marie Roberts
Components Research, Intel Components Research, Intel Corporation Stephanie Bojarski
Components Research, Intel Corporation Payam Amin
Components Research, Intel Corporation Jessica Torres
Components Research, Intel Corporation Matthew Metz
Components Research, Intel Corporation Guoji Zheng
QuTech and Kavli Institute of Nanoscience, TU Delft Anne-Marije Zwerver
QuTech, TU Delft QuTech and Kavli Institute of Nanoscience, TU Delft Jelmer Boter
QuTech and Kavli Institute of Nanoscience, TU Delft QuTech and Kavli Institute of Nanoscience, Delft University of Technology Juan Pablo Dehollain
QuTech, TU Delft QuTech and Kavli Institute of Nanoscience, Delft University of Technology QuTech and Kavli Institute of Nanoscience, TU Delft GertJan Eenink
QuTech and Kavli Institute of Nanoscience, TU Delft Leonardo Massa
QuTech and Kavli Institute of Nanoscience, TU Delft Diego Sabbagh
QuTech and Kavli Institute of Nanoscience, TU Delft Nodar Samkharadze
QuTech and Kavli Institute of Nanoscience, TU Delft Christian Volk
QuTech and Kavli Institute of Nanoscience, TU Delft Brian Paquelet Wütz
QuTech and Kavli Institute of Nanoscience, TU Delft Menno Veldhorst
QuTech and Kavli Institute of Nanoscience, TU Delft QuTech, Delft University of Technology Giordano Scappucci
QuTech and Kavli Institute of Nanoscience, TU Delft Lieven Vandersypen
QuTech, TU Delft QuTech and Kavli Institute of Nanoscience, Delft University of Technology QuTech and Kavli Institute of NanoScience, TU Delft Delft University of Technology QuTech and Kavli Institute of Nanoscience, TU Delft QuTech & Kavli Institute of Nanoscience, Delft University of Technology Jim Clarke
Components Research, Intel Components Research, Intel Corporation Intel Intel Corporation Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR, 97124, USA