Full 300mm fin based QD device characterization

ORAL

Abstract

Intel’s efforts towards the fabrication of spin qubit devices have required a comprehensive device characterization, from transistors and quantum dots, to qubits, which have been co-fabricated in the same die/wafer. In this talk, we will present an in-depth device characterization, and the results from quantum dot devices manufactured in a full 300mm line. We will give details of the fin based process flow which yields high charging energy devices. The extraction of QD related figures of merit from room and low temperature testing (1.6K) are part of the method to rapidly screen 300mm wafers with thousands of devices which are used to determine the spin qubit devices that will be taken to the milli-kelvin measurements; keeping up with the pace of the 300mm fab output.

Presenters

  • Hubert C George

    • Components Research, Intel Corporation

Authors

  • Hubert C George

    • Components Research, Intel Corporation
  • Nicole Thomas

    • Components Research, Intel Corporation
  • Ravi Pillarisetty

    • Components Research, Intel Corporation
  • Lester Lampert

    • Components Research, Intel
    • Components Research, Intel Corporation
    • Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR, 97124, USA
  • Thomas Watson

    • Components Research, Intel Corporation
  • Jeanette Marie Roberts

    • Components Research, Intel
    • Components Research, Intel Corporation
  • Stephanie Bojarski

    • Components Research, Intel Corporation
  • Payam Amin

    • Components Research, Intel Corporation
  • Jessica Torres

    • Components Research, Intel Corporation
  • Matthew Metz

    • Components Research, Intel Corporation
  • Guoji Zheng

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Anne-Marije Zwerver

    • QuTech, TU Delft
    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Jelmer Boter

    • QuTech and Kavli Institute of Nanoscience, TU Delft
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
  • Juan Pablo Dehollain

    • QuTech, TU Delft
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • GertJan Eenink

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Leonardo Massa

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Diego Sabbagh

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Nodar Samkharadze

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Christian Volk

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Brian Paquelet Wütz

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Menno Veldhorst

    • QuTech and Kavli Institute of Nanoscience, TU Delft
    • QuTech, Delft University of Technology
  • Giordano Scappucci

    • QuTech and Kavli Institute of Nanoscience, TU Delft
  • Lieven Vandersypen

    • QuTech, TU Delft
    • QuTech and Kavli Institute of Nanoscience, Delft University of Technology
    • QuTech and Kavli Institute of NanoScience, TU Delft
    • Delft University of Technology
    • QuTech and Kavli Institute of Nanoscience, TU Delft
    • QuTech & Kavli Institute of Nanoscience, Delft University of Technology
  • Jim Clarke

    • Components Research, Intel
    • Components Research, Intel Corporation
    • Intel
    • Intel Corporation
    • Components Research, Intel Corporation, 2501 NW 229th Avenue, Hillsboro, OR, 97124, USA