Characterization of Electron Beam Damage to (Bi<sub>x</sub>Sb<sub>1-x</sub>)<sub>2</sub>Te<sub>3</sub>-Based Topological Insulators
ORAL
Abstract
Models for topological superconductivity based on proximitized superconductivity in quantum Hall systems have proven difficult to realize, in part, because high magnetic fields destroy Cooper pairing. The discovery of the quantum anomalous Hall (QAH) effect in Cr- and V-doped (BixSb1-x)2Te3 has attracted attention because it provides a platform to demonstrate the same models of topological superconductivity without high magnetic fields. A remaining barrier is fabrication of the desired structures. Photolithographic patterning has been employed with QAH materials to great effect but lacks the spatial resolution needed to define, for example, Josephson junctions and quantum point contacts. Electron beam lithography has largely been avoided for fear of damaging or doping the QAH material, whose Fermi level must be very precisely positioned to observe the QAH effect. We discuss our efforts to characterize electron beam damage to (BixSb1-x)2Te3-based topological insulators. We also propose possible approaches for submicron patterning involving no electrons hitting the substrate.
*This work is supported by the Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division, under Contract DE-AC02-76SF00515.
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Presenters
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Linsey Rodenbach
- Stanford University