Manipulation of electronic defects in hexagonal boron nitride

ORAL

Abstract

Hexagonal boron nitride (hBN) provides a regular nuclear spin lattice, which makes it a promising platform for studying models of spin dynamics. This material also hosts numerous electronic defects that have been well-characterized in bulk electron paramagnetic resonance (EPR) spectroscopy. Nitrogen vacancy (NV) centers in diamond are very sensitive local magnetic field probes that can polarize and control single electronic spins and nanoscale volumes of nuclear spins. In this experiment we use an NV center to manipulate electronic defects in and near hBN, and we are working towards utilizing these defects for better initialization and control of local nuclear spins.

*This work was supported by the Defense Advanced Research Projects Agency (QuASAR program), National Science Foundation (NSF), Center for Ultracold Atoms, Army Research Office (ARO) MURI program, National Security Science and Engineering Faculty Fellowship program, and Moore Foundation. E.K.U. acknowledges support by the NSF (Graduate Research Fellowship Program under grant DGE1144152).

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Presenters

  • Elana Urbach

    • Harvard University
    • Physics, Harvard University

Authors

  • Elana Urbach

    • Harvard University
    • Physics, Harvard University

  • Tamara Sumarac

    • Harvard University

  • Helena Knowles

    • Harvard University

  • Javier D Sanchez-Yamagishi

    • University of California Irvine
    • Physics, University of California Irvine

  • Soonwon Choi

    • University of California, Berkeley
    • UC Berkeley
    • Physics, University of California Berkeley
    • University of California Berkeley
    • Harvard University
    • Physics, University of California, Berkeley

  • Bo Dwyer

    • Harvard University
    • Physics, Harvard University

  • Trond I Andersen

    • Harvard University

  • Mikhail Lukin

    • Harvard University
    • Physics, Harvard University