Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field

ORAL

Abstract

We demonstrate single quantum dot (p-type InGaAs quantum dot) electroluminescence (EL) with a circular polarization degree up to 35% at zero applied magnetic field, proving highly efficient electrical injection of spin polarized electrons [1]. It is achieved thanks to an ultrathin CoFeB electrode presenting Perpendicular Magnetic Anisotropy on top of a spin-LED. In addition, we measure an Overhauser shift of several micro-eV at zero magnetic field for the positively charged exciton (trion X+) EL emission, which changes sign as we reverse the injected electron spin orientation. This is a signature of dynamic polarization of the nuclear spins [1] in the quantum dot induced by the hyperfine interaction with the electrically injected electron spin. Both EL circular polarization and Overhauser shift follow the hysteresis cycle of the magnetic electrode. This study paves the way for electrical initialization of electron and nuclear spins in a single quantum dot without any external magnetic field. [1] F. Cadiz et al, Nano Letters 18 (4), 2381-2386 (2018)

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Presenters

  • Pierre Renucci

    • LPCNO, Institut National des Sciences Appliquees de Toulouse
    • INSA/CNRS

Authors

  • Pierre Renucci

    • LPCNO, Institut National des Sciences Appliquees de Toulouse
    • INSA/CNRS

  • Fabian Cadiz

    • Ecole Polytechnique

  • Adbelhak djeffal

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Delphine Lagarde

    • CNRS/INSA
    • LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Andrea Balocchi

    • LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Bingshan Tao

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Bo Xu

    • Institute of Semiconductors Beijing

  • shiheng liang

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • mathieu stoffel

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • xavier devaux

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Henri Jaffres

    • Unité Mixte de Physique CNRS-Thales

  • Jean-Marie George

    • Unité Mixte de Physique CNRS-Thales

  • Michel Hehn

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Stephane Mangin

    • University of Lorraine
    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université

  • Hélène Carrere

    • LPCNO, Institut National des Sciences Appliquees de Toulouse

  • Xavier Marie

    • CNRS/INSA
    • LPCNO, Institut National des Sciences Appliquees de Toulouse
    • LPCNO, Institut National des Sciences Appliquées de Toulouse
    • INSA/CNRS
    • INSA Toulouse

  • Thierry Amand

    • LPCNO, Institut National des Sciences Appliquees de Toulouse
    • INSA/CNRS

  • Xiufeng Han

    • Institute of Physics, Beijing

  • Zhanguo Wang

    • Institute of Semiconductors Beijing

  • Bernhard Urbaszek

    • CNRS/INSA
    • LPCNO, Institut National des Sciences Appliquees de Toulouse
    • INSA/CNRS
    • INSA Toulouse

  • Yuan Lu

    • Institut Jean Lamour, UMR 7198,CNRS-Nancy Université