Quantum Transport in N-doped 2D Tellurene

ORAL

Abstract

Tellurium (Te) is a p-type narrow-bandgap high-mobility semiconductor with one dimensional van der Waals (vdW) structure. It has a unique chiral-chain crystal lattice in which individual helical chains of Te atoms are stacked together by vdW type bonds and spiral around c-axis. With recently developed solvent-based growth method, we are able to probe the magneto-transport of Te in its 2D limit, coined as tellurene. In this work, we demonstrate an effective dielectric doping technique to realize n-type tellurene. We report on the pronounced weak anti-localization, quantum Hall effect, strong Shubnikov-de Haas oscillations on n-doped tellurene with temperature down to tens of mK and magnetic fields up to 31 Tesla. Angle, electron density and temperature dependence of the oscillations were systematically measured and analysized.

*A portion of this work was performed at the National High Magnetic Field Laboratory, which is supported by National Science Foundation Cooperative Agreement No. DMR-1644779* and the State of Florida.

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Presenters

  • Chang Niu

    • Purdue University

Authors

  • Chang Niu

    • Purdue University

  • Gang Qiu

    • Purdue University
    • School of Electrical and Computer Engineering, Purdue University

  • Yixiu Wang

    • Purdue University

  • Wenzhuo Wu

    • Purdue University
    • School of Industrial Engineering, Purdue University

  • Peide (Peter) Ye

    • Purdue University
    • School of Electrical and Computer Engineering, Purdue University