Improved control of quantum dots in Ge/SiGe quantum wells for spin qubit applications
ORAL
Abstract
Much work on semiconductor spin qubits has focused on extending capabilities and understanding limitations of Si andGaAs.In parallel,alternative materials are being scrutinized for potential advantages in terms of coherence times,control,and extensibility,without sacrificing key features.One such quantum well system,undoped strained Ge/SiGe,appears promising as a candidate spin qubit host due to low disorder,small hole effective mass, and large spin-orbit coupling,and has already been used to demonstrate basic single quantum dots.We take the next steps toward hole spin qubits by preparing a double quantum dot in a one-layer gate structure,then using multilayer gate stacks to demonstrate improved quantum dot control.
*This work was funded in part by the LDRD Program and performed in part at the Center for Integrated Nanotechnologies,an Office of Science UserFacility operated for the USDOE Office of Science.Sandia National Laboratories is a multi-mission laboratory managed and operated by National Technology&Engineering Solutions of SandiaLLC,a wholly owned subsidiary of Honeywell International Inc,for the USDOE National Nuclear Security Administration under contract DENA0003525.The views expressed in this work do not necessarily represent the views of the USDOE or the US Government.
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Presenters
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Will Hardy
- Sandia National Laboratories