In-plane Selective Area InSb Networks for Scalable Majorana Devices
ORAL
Abstract
Theoretical proposals predict that networks of Indium Antimonide (InSb) nanowires are suitable for Majorana based quantum computing.
Here we show In-plane Selective Area Networks (InSANe) of InSb nanowires grown catalyst free with a high crystal quality. Although InSb has a large lattice mismatch with Indium Phosphide (InP) (high bandgap substrate material), we manage to synthesize single crystal networks. Transmission electron microscopy (TEM) analysis confirms a zincblende InSb nanowire with a single twin defect at the interface with the underlying substrate. Low temperature transport measurements (e.g. Aharonov-Bohm interference) demonstrate a large electron coherence length of up to 10 μm. An epitaxial superconductor on these networks induces a hard superconducting gap and gives rise to a 2e-periodic Coulomb blockade, making this platform very promising for Majorana topological quantum computing.
Here we show In-plane Selective Area Networks (InSANe) of InSb nanowires grown catalyst free with a high crystal quality. Although InSb has a large lattice mismatch with Indium Phosphide (InP) (high bandgap substrate material), we manage to synthesize single crystal networks. Transmission electron microscopy (TEM) analysis confirms a zincblende InSb nanowire with a single twin defect at the interface with the underlying substrate. Low temperature transport measurements (e.g. Aharonov-Bohm interference) demonstrate a large electron coherence length of up to 10 μm. An epitaxial superconductor on these networks induces a hard superconducting gap and gives rise to a 2e-periodic Coulomb blockade, making this platform very promising for Majorana topological quantum computing.
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Presenters
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Roy Op het Veld
- Applied Physics, Eindhoven University of Technology
- Eindhoven University of Technology
- Applied Physics, Eindhoven Univ. of Technology