Ultra-thin body buried oxide 28nm FD-SOI platform for silicon quantum dots

ORAL

Abstract

Silicon spin qubits, with their long coherence time and their compatibility with CMOS industrial technology shows great promise for large scale quantum computing and co-integration. Here we present a UTBB FD-SOI platform that is designed to operate as a transistor and host quantum dots. This platform is composed of NMOS structures with wire gate and split enhancement gate geometries, and is entirely fabricated inside STMicroelectronics’ standard process line. We explore various regimes in gate voltage space and demonstrate reproducible operation of multiples devices at 1.5 K and 10m K. We identify various regime for formation of quantum dots including electrostatic single and double quantum dots. We also present a cryogenic characterizsation of classical FD-SOI transistors that involves variation of mobility, kink effect and split C-V analysis down to 10 mK. These results set a pathway towards improved FD-SOI devices and quantum dots fully fabricated in standard process line.

*This work was supported by the Fonds de Recherche du Québec Nature et Technologies and the Canada Foundation for Innovation (CFI). This research was undertaken thanks in part to funding from the Canada First Research Excellence Fund.

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Presenters

  • Claude Rohrbacher

    • Institut quantique, Universite de Sherbrooke

Authors

  • Claude Rohrbacher

    • Institut quantique, Universite de Sherbrooke

  • Sophie Rochette

    • Institut quantique and Département de Physique, Université de Sherbrooke, Sherbrooke, Québec, J1K 2R1, Canada
    • Institut quantique, Universite de Sherbrooke

  • Julien Camirand Lemyre

    • Institut quantique and Département de Physique, Université de Sherbrooke, Sherbrooke, Québec, J1K 2R1, Canada
    • Institut quantique, Universite de Sherbrooke
    • Institut quantique, Université de Sherbrooke

  • Alexandre Bédard-Vallée

    • Institut quantique, Universite de Sherbrooke

  • Pascal Lemieux

    • Institut quantique, Universite de Sherbrooke

  • Philippe Galy

    • Technology and Design Platforms Research and Development Center, STMicroelectronics

  • Thomas Bedecarrats

    • Technology and Design Platforms Research and Development Center, STMicroelectronics

  • Franck Arnaud

    • Technology and Design Platforms Research and Development Center, STMicroelectronics

  • Dominique Drouin

    • Departement de Genie Electrique et Informatique, Universite de Sherbrooke

  • Michel Pioro-Ladriere

    • Institut quantique and Département de physique, Université de Sherbrooke
    • Institut quantique and Département de Physique, Université de Sherbrooke, Sherbrooke, Québec, J1K 2R1, Canada
    • Institut quantique and Département de Physique, Université de Sherbrooke
    • Institut quantique, Universite de Sherbrooke & Canadian Institute for Advanced Research
    • Universite de Sherbrooke
    • Institut quantique, Université de Sherbrooke and Canadian Institute for Advanced Research