A silicon metal-oxide-semiconductor quantum dot patterned with nano-imprint lithography

ORAL

Abstract

We have transferred the metal gate pattern of a nanoscale depletion mode quantum dot onto a Si/SiO2 substrate with nano-imprint lithography (NIL), eliminating the use of e-beam lithography (EBL) and, consequently, reducing the effects of charge impurities. Critical features with 50 nm scale and separation can be dependably reproduced without making substantial changes to the device design. By studying charge transport through a quantum point contact and quantum dot, the prevalence of impurities was diminished in NIL devices when compared to similar EBL counterparts. Furthermore, 1/f charge noise was measured with an average of 1.4 µeV/√Hz at 1 Hz, equivalent to previous measurements made on EBL devices. This work offers a path toward reliable quantum dot operation in MOS by improving fabrication techniques to reduce charge impurities.

*This work was funded by the U.S. Army Research Office (ARO) through Grant No. # W911NF-17-1-0242

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Presenters

  • John Rooney

    • Physics, University of California, Los Angeles

Authors

  • John Rooney

    • Physics, University of California, Los Angeles

  • Nicholas Penthorn

    • Physics & Astronomy, University of California, Los Angeles
    • Physics, University of California, Los Angeles
    • UCLA

  • Joshua S Schoenfield

    • Physics, University of California, Los Angeles
    • UCLA

  • HongWen Jiang

    • Physics & Astronomy, University of California, Los Angeles
    • Physics, University of California, Los Angeles
    • UCLA