Finite Element Simulation of Phase Change Memory Cell

ORAL

Abstract

We perform finite element simulations of read, reset and set operations on Ge2Sb2Te5 phase change memory cells using the model developed in [1], [2]. An electrical circuit model is included to utilize a transistor as an access device. Thermoelectric effects (Thomson and Peltier heat) are incorporated in the current continuity and heat transfer physics which are solved self-consistently to obtain potential and temperature distributions across the device. We use temperature dependent material parameters (Seebeck coefficient, thermal conductivity and electrical resistivity) to precisely model electrothermal phenomena in the cell. We perform successive read, reset and set operations and analyze nucleation, growth and amorphization as well as temperature and resistance profiles during the simulations.

References:
[1] Z. Woods and A. Gokirmak, IEEE Trans. Electron Devices 64, 4466 (2017).
[2] Z. Woods et al., IEEE Trans. Electron Devices 64, 4472 (2017).

*This work was supported by Air Force Office of Scientific Research (AFOSR) through award FA9550-14-1-0351.

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Presenters

  • MD TASHFIQ BIN KASHEM

    • University of Connecticut

Authors

  • MD TASHFIQ BIN KASHEM

    • University of Connecticut

  • Jake Scoggin

    • University of Connecticut
    • ECE, UConn
    • Electrical and Computer Engineering, University of Connecticut

  • Sadid Muneer

    • Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA
    • University of Connecticut

  • Helena Silva

    • Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA
    • University of Connecticut
    • ECE, UConn

  • Ali Gokirmak

    • Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA
    • University of Connecticut
    • ECE, UConn
    • Electrical and Computer Engineering, University of Connecticut