Development of Self-rectifying TaO<sub>y</sub>/Nanoporous TaO<sub>x</sub> Memristor Synapse for Suppressing Non-neural Signal in the Large-scale Neuromorphic Array System

ORAL

Abstract

Memristor that consists of a metal-oxide layer sandwiched between two conductors is being greatly envisioned as a platform to imitate the principal of biological synapses due to its nonlinear and dynamic electrical properties depending on the history of applied electrical programming[1]. In this study, we fabricated the nanoporous (NP) TaOx memristor device by an anodic treatment in the room temperature and utilized the device as the two-terminal artificial synapses[2]. The device exhibits a stable self-rectifying I-V switching behavior with ~104 nonlinearity, which can effectively prevent the undesired neural signals in the densely-integrated synaptic array. Based on analog shift of the Ohmic-contact site by diverse electrical stimuli, the essential synaptic functions were successfully mimicked. A 16 × 16 crossbar array with only our device was fabricated and statistically evaluated. In addition, we investigated the effect of the nonlinearity of the synaptic device on the accuracy of the pattern recognition using artificial neural network simulation. Taken all together, we believe the designed device can provide a route toward the large-scale neuromorphic computing technology.

References
[1] Wang, G. et al. Nano Lett. 2015, 15, 6009-6014.
[2] Choi, S. et al. under review (2018).

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Presenters

  • Sanghyeon Choi

    • KU-KIST Graduate School of Converging Science & Technology, Korea university
    • KU-KIST Graduate School of Converging Science & Technology, Korea University

Authors

  • Sanghyeon Choi

    • KU-KIST Graduate School of Converging Science & Technology, Korea university
    • KU-KIST Graduate School of Converging Science & Technology, Korea University

  • Seonghoon Jang

    • Korea University
    • KU-KIST Graduate School of Converging Science & Technology, Korea University

  • Jung-Hwan Moon

    • Advanced Technology Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
    • Department of Materials Science and Engineering, Korea University

  • Jong Chan Kim

    • UNIST
    • UNIST Central Research Facilities and School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)

  • Hu Young Jeong

    • UNIST
    • UNIST Central Research Facilities and School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)

  • Peonghwa Jang

    • Department of Materials Science and Engineering, Korea University

  • Kyung-Jin Lee

    • Department of Materials Science and Engineering, Korea University

  • Gunuk Wang

    • KU-KIST Graduate School of Converging Science and Technology, Korea University
    • KU-KIST Graduate School of Converging Science & Technology, Korea university
    • Korea University
    • KU-KIST Graduate School of Converging Science & Technology, Korea University