Coupling of single photon emitters in hBN to microcavities
ORAL
Abstract
Hexagonal Boron Nitride (hBN) was recently found to be a source of single photon emitters (SPE) which exhibit desirable properties such as narrow room-temperature linewidths, spectral tunability and operation under ambient conditions. Despite these advantageous properties, scalable integration of these emitters into chip-based cavities has proven elusive. Here, we demonstrate coupling of hBN defect emission to Si3N4 microdisk cavities by exploiting the topography of the cavity structure to engineer strain and thereby activate SPEs which near field couple to the cavities. We find the cavity coupled emission to have a Purcell enhancement of 1.3, close to the cavity’s theoretical Purcell factor of 1.6. The present work is a first step towards cavity enhanced SPEs in this material system and paves the way for deterministic cavity coupling of SPEs that operate at room temperature.
*This work is supported by the NSF CREST IDEALS center, NSF MRSEC program (DMR-1420634) and the NSF EFRI 2-DARE program (EFMA -1542863) and was partially carried out at the CUNY ASRC NanoFabrication Facility.
–
Presenters
-
Nicholas Proscia
- Physics, City College of New York