Electronic and Optical Properties of SnO<sub>2</sub> at High Pressure

ORAL

Abstract

Tin oxide (SnO2) is one of the most widely used n-type transparent conducting oxide materials, which has attracted increasing interest due to its outstanding electrical and optical properties for potential applications. We present a detailed investigation on pressure-induced structural, electronic, and optical transitions of SnO2 to 60 GPa, using a diamond anvil cell, micro-confocal Raman spectroscopy, infrared absorption, reflectivity, and electrical resistance measurements. The results indicate that a wide band gap (Eg=3.6 eV) n-type semiconductor undergoes a semiconductor to insulator transition at ~18 GPa. Furthermore, we will present the temperature dependent resistance changes and photoconductivity with different power density at high pressures.

*The NSF grant DMR-1809649 supported this research.

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Presenters

  • Nathan Dasenbrock-Gammon

    • Physics and Astronomy, University of Rochester
    • Department of Physics and Astronomy, University of Rochester

Authors

  • Nathan Dasenbrock-Gammon

    • Physics and Astronomy, University of Rochester
    • Department of Physics and Astronomy, University of Rochester

  • Ranga P Dias

    • Physics and Astronomy, Mechanical Engineering, University of Rochester
    • Department of Mechanical Engineering, Department of Physics and Astronomy, University of Rochester

  • Elliot Snider

    • Mechanical Engineering, University of Rochester
    • Department of Mechanical Engineering, University of Rochester