Spin-charge coupled transport in topological-insulator-based heterostructures

ORAL

Abstract

Experimental advances have made possible the creation of heterostructures composed of two or more layers of two-dimensional systems that combine their individual properties to reach desired functionalities. In this talk, we present the spin-charge coupled diffusion equations for heterostructures with random interlayer tunneling and in which one of the layers has strong spin-orbit coupling. We consider two distinct regimes: the weak coupling regime, for which the disorder-induced scattering time is shorter than the tunneling-induced scattering time, and the strong coupling regime, for which random tunneling events are dominant. We then apply our formalism to the case in which a two-dimensional electron gas is placed in proximity to the surface of a three-dimensional topological insulator and discuss the relevance of our results for experiments.

*This work is supported by NSF, ONR, BSF, the College of Arts and Sciences at Indiana University, and the College of Arts and Sciences at the University of Alabama.

Presenters

  • Enrico Rossi

    • Physics Department, College of William and Mary
    • Physics, College of William and Mary
    • Department of Physics, William & Mary.

Authors

  • Enrico Rossi

    • Physics Department, College of William and Mary
    • Physics, College of William and Mary
    • Department of Physics, William & Mary.
  • Martin Rodriguez-Vega

    • Department of Physics, Indiana University; Department of Physics, The University of Texas at Austin.
  • Georg Schwiete

    • University of Alabama
    • Department of Physics and Astronomy, Center for Materials for Information Technology (MINT), The University of Alabama.