Defects in Semiconductors -- Wide Band Gap
FOCUS · K11 ·
Presentations
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Vibrational spectroscopy of O-H centers in Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Michael Stavola
- Lehigh University
Authors
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Michael Stavola
- Lehigh University
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W Fowler
- Lehigh University
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Ying Qin
- Lehigh University
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Multiple O-H centers in β-Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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W Fowler
- Lehigh University
Authors
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W Fowler
- Lehigh University
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Michael Stavola
- Lehigh University
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Ying Qin
- Lehigh University
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Probing the Nanoscale Interplay of Native Defects and Doping in Oxide Semiconductors
Invited
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Presenters
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Leonard Brillson
- Ohio State University
- Department of Physics, The Ohio State University
Authors
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Leonard Brillson
- Ohio State University
- Department of Physics, The Ohio State University
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Deep acceptors in Ga<sub>2</sub>O<sub>3</sub>
ORAL
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Presenters
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Hartwin Peelaers
- Department of Physics and Astronomy, University of Kansas
- University of Kansas
Authors
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Hartwin Peelaers
- Department of Physics and Astronomy, University of Kansas
- University of Kansas
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John Lyons
- Center for Computational Materials Science, US Naval Research Laboratory
- United States Naval Research Laboratory
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Joel Basile Varley
- Lawrence Livermore National Laboratory
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Chris Van de Walle
- University of California, Santa Barbara
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara, CA 93106, USA
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A study of deep level defects in β-Ga<sub>2</sub>O<sub>3</sub> using thermal admittance spectroscopy
ORAL
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Presenters
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Mo Ahoujja
- Physics, The University of Dayton
Authors
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J Hendricks
- Air Force Institute of Technology, Wright-Patterson AFB, OH
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Mo Ahoujja
- Physics, The University of Dayton
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Shin Mou
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH
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Adam T Neal
- Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, OH
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QSGW calculation of the band structure of Ga2O3-Al2O3 alloys
ORAL
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Presenters
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Amol Ratnaparkhe
- Case Western Reserve University
Authors
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Amol Ratnaparkhe
- Case Western Reserve University
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Walter R L Lambrecht
- Case Western Reserve University
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Enabling <i>p</i>-type doping in In<sub>2</sub>O<sub>3</sub> by a band engineering through alloying
ORAL
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Presenters
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Fernando Sabino
- Department of Material science and Engineering, University of Delaware
- Department of Physics & Astronomy, University of Delaware
- Materials Science and Engineering, University of Delaware
Authors
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Fernando Sabino
- Department of Material science and Engineering, University of Delaware
- Department of Physics & Astronomy, University of Delaware
- Materials Science and Engineering, University of Delaware
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Suhuai Wei
- Beijing Computational Science Research Center
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Anderson Janotti
- Department of Material science and Engineering, University of Delaware
- Department of Physics & Astronomy, University of Delaware
- Materials Science and Engineering, University of Delaware
- University of Delaware
- Department of Materials Science & Engineering, University of Delaware
- Department of Materials Science and Engineering, University of Delaware
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Non-exponential decay of persistent photocarriers in an AlGaN/AlN/GaN heterostructure
ORAL
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Presenters
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David Daughton
- Lake Shore Cryotronics (United States)
Authors
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David Daughton
- Lake Shore Cryotronics (United States)
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BoKuai Lai
- Lake Shore Cryotronics (United States)
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Jeffrey Lindemuth
- Lake Shore Cryotronics (United States)
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Incorporation of Boron in Gallium Nitride
ORAL
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Presenters
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Mark E. Turiansky
- University of California, Santa Barbara
- Department of Physics, University of California, Santa Barbara
Authors
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Mark E. Turiansky
- University of California, Santa Barbara
- Department of Physics, University of California, Santa Barbara
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Jimmy Shen
- University of California, Santa Barbara
- Department of Physics, University of California, Santa Barbara
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Darshana Wickramaratne
- NRC Research Associate residing at, US Naval Research Laboratory, Washington, DC 20375, USA
- Naval Research Laboratory
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara
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Chris Van de Walle
- University of California, Santa Barbara
- Materials Department, University of California, Santa Barbara
- University of California, Santa Barbara, CA 93106, USA
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Identifying Defects and their Electronic Signatures in Regrown GaN Heterostructures
ORAL
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Presenters
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Jiaheng He
- Department of Materials Science and Engineering, University of Michigan
Authors
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Jiaheng He
- Department of Materials Science and Engineering, University of Michigan
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Guanjie Cheng
- Department of Materials Science and Engineering, University of Michigan
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Davide Del Gaudio
- Materials Science and Engineering, University of Michigan
- Department of Materials Science and Engineering, University of Michigan
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Jordan M Occena
- Department of Materials Science and Engineering, University of Michigan
- Materials Science and Engineering, University of Michigan
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Fabian Naab
- Michigan Ion Beam Laboratory, University of Michigan
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Rachel Goldman
- Materials Science and Engineering, university of Michigan
- Materials Science and Engineering, University of Michigan
- Materials Science & Engineering, University of Michigan - Ann Arbor
- Department of Materials Science and Engineering, University of Michigan
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Mohsen Nami
- Department of Electrical Engineering, Yale University
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Bingjun Li
- Department of Electrical Engineering, Yale University
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Jung Han
- Department of Electrical Engineering, Yale University
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Spectrally resolved dynamics of energy transfer in GaN:Eu
ORAL
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Presenters
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Ruoqiao Wei
- Lehigh University
Authors
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Ruoqiao Wei
- Lehigh University
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Brandon Mitchell
- West Chester University
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Dolf Timmerman
- Osaka University
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Tom Gregorkiewicz
- University of Amsterdam
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Wanxin Zhu
- Osaka University
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Yasufumi Fujiwara
- Osaka University
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Volkmar R G Dierolf
- Lehigh University
- Physics, Lehigh University
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Photoluminescence quantum efficiency of Nd optical centers in GaN epilayers
ORAL
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Presenters
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Yifei Wang
- Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech
- Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
Authors
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Yifei Wang
- Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech
- Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Ho Vinh
- Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech
- Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Vinh Q Nguyen
- Department of Physics & Center for Soft Matter and Biological Physics, Virginia Tech
- Department of Physics and Center for Soft Matter and Biological Physics, Virginia Tech
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Interface chemistry and electrical characteristics of 4H-SiC/SiO<sub>2</sub> after nitridation in varying atmospheres
ORAL
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Presenters
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Anna Regoutz
- Imperial College London
Authors
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Anna Regoutz
- Imperial College London
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