Pressure tuning in URu<sub>2</sub>Si<sub>2-<i>x</i></sub>P<sub><i>x</i></sub>
ORAL
Abstract
In an effort to elucidate the unknown hidden ordered state at T0 ~ 17.5 K in the heavy fermion compound URu2Si2, temperature dependent electrical resistivity measurements were performed on the electron doping chemical substitution series Si → P under quasi-hydrostatic pressures up to 21 kbar. Previous studies show that electron doping causes the HO to be rapidly suppressed towards zero temperature over a small x-range, after which there is a broad paramagnetic (PM) region that is eventually replaced by antiferromagnetic (AFM1) order at large x[1,2]. Our results indicate that, like x = 0, HO transforms to AFM2 at critical pressures that decrease with increasing x, while the PM and AFM1 states are robust against pressure. We will present the resulting T - x - P phase diagram and discuss the ordered states in the electronic phase space surrounding URu2Si2.
[1]Gallagher A. et al., Nat. Commun. 7 10712 (2016). [2]Gallagher A. et al., J. Phys.: Condens. Matter 29 024004 (2016).
[1]Gallagher A. et al., Nat. Commun. 7 10712 (2016). [2]Gallagher A. et al., J. Phys.: Condens. Matter 29 024004 (2016).
*This work was performed at the National High Magnetic Field Laboratory, which is supported by the National Science Foundation Cooperative Agreements Nos. DMR-1644779 and 1157490 and the State of Florida.
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Presenters
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Greta Chappell
- Florida State University
- National High Magnetic Field Laboratory
- National High Magnetic Field Laboratory and Florida State University