Structural and Electronic properties of Copper Doped amorphous Alumina

ORAL

Abstract

To understand the atomic properties of Conducting Bridge Random Access Memory(CBRAM) devices based on Alumina with Copper as one of the active electrodes, we offer new models of amorphous Alumina with varying concentrations of Cu having general form (a-Al2O3)1-nCun with n = 0, 0.10, 0.20 and 0.30. We study the structural properties of these models. It turns out that Cu atoms cluster because of its less proclivity to diffuse in the highly ionic host a-Al2O3. The clustering produces a narrow conducting path for electrical current. To elucidate the electric conduction path, we employ the Kubo-Greenwood formula in a novel space-projected form[1]. We show that the conduction-active component of the network is an interconnected Cu cluster.

[1] K. Prasai, KN. Subedi, K. Ferris, P. Biswas and DA. Drabold, physica status solidi(RRL) 12, 1800238(2018)

*Work supported by NSF grants under DMR awards 1507670, 1507166 and 1506836

–

Presenters

  • Kashi Subedi

    • Ohio University

Authors

  • Kashi Subedi

    • Ohio University

  • Kiran Prasai

    • E. L. Ginzton Laboratory, Stanford University
    • Ginzton Laboratory, Stanford University
    • Applied Physics, Stanford University
    • E. L. Ginzton Laboratory, Stanford

  • David A Drabold

    • Department of Physics and Astronomy, Ohio University
    • Ohio University