Nano-imaging of local strain in hexagonal boron nitride

ORAL

Abstract

Strain plays an important role in condensed matter physics. Strain effect becomes more interesting in two-dimensional materials, both because an unusually large strain can be achieved without breaking the material, and because the strain can lead to novel behavior such as the generation of pseudomagnetic field in graphene. Here, we report an ultra-sensitive nanometer scale mapping and a quantitative analysis of local strain field in atomically thin hexagonal boron nitride.

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Presenters

  • Bosai Lv

    • Physics, Shanghai Jiaotong University
    • Shanghai Jiao Tong University

Authors

  • Bosai Lv

    • Physics, Shanghai Jiaotong University
    • Shanghai Jiao Tong University

  • Hongyuan Li

    • Physics, Shanghai Jiaotong University
    • Shanghai Jiao Tong University

  • Lili Jiang

    • Physics, UC Berkeley
    • UC Berkeley

  • Wanfei Shan

    • Shanghai Jiao Tong University

  • Hans Bechtel

    • Advanced Light Source Division, Lawrence Berkeley National Laboratory
    • Lawrence Berkeley National Laboratory

  • Michael Crocker Martin

    • Lawrence Berkeley National Laboratory

  • Weidong Luo

    • Shanghai Jiao Tong University
    • Department of Physics and Astronomy, Shanghai Jiao Tong University

  • Feng Wang

    • University of California - Berkeley
    • University of California, Berkeley
    • Physics, UC Berkeley
    • Department of Physics, University of California at Berkeley, Berkeley, CA 94709, USA
    • University of California at Berkeley
    • Lawrence Berkeley National Laboratory and UC Berkeley
    • UC Berkeley
    • Physics, University of California, Berkeley

  • Zhiwen Shi

    • Physics, Shanghai Jiaotong University
    • Shanghai Jiao Tong University