3D imaging and manipulation of subsurface selenium vacancies in PdSe<sub>2</sub>
ORAL
Abstract
We report 3D imaging and manipulation of individual Se vacancies in PdSe2 using a STM. By imaging the characteristic charge rings of defects arising from a tip-induced band bending effect, we first determine the lateral and depth location of VSe precisely in the 3D lattice. We then use a STM tip as a movable electrostatic gate to manipulate VSe by reversibly switching the charge states of defects between neutral and negative states. We find a slightly higher bias voltage (~2.0 V) can trigger vacancy migrations, which allows us to demonstrate both direct “writing” and “erasing” of atomic defects from a particular lattice site in PdSe2. The results are corroborated by first-principles calculations that reveal the formation energy and diffusion barriers of Se vacancies in PdSe2. This work opens an opportunity for defect engineering at the atomic level to achieve controlled phase transformations, or on-demand switchable states for such as neuromorphic computing and quantum bits.
*This research was performed at the Center for Nanophase Materials Sciences which is a DOE Office of Science User Facility.
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Presenters
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An-Ping Li
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory
- Oak Ridge National Laboratory