Spontaneous defect formation on the polar surface of giant Rashba semiconductors BiTeX
· Invited
Abstract
Defects in semiconductors are crucial for the performance of modern electronics. Although there are tremendous progress on theoretical understanding of defect formation and kinetics in functional materials, visualizing the kinetics of the defect formation remains a great challenge. Herein, we report an exciting discovery of spontaneous formation of point defects below room temperature on the surface of polar semiconductors BiTeX (X=Cl, Br and I), where giant Rashba splitting of bulk bands was reported. The defect density increases over three order of magnitudes when the surface temperature increases from ~10 K to room temperature. Our scanning tunneling microscopy studies reveal formation of Frenkel pairs of Bi vacancies and interstitial Bi atoms, followed by the formation of BiTe antisites. Combined with first principle calculations, our results reveal a significant reduction of formation energy of Frenkel pairs due to surface band bending of polar surface. Our results demonstrate a dramatic modulation of defect formation via surface bending of polar surface, which is crucial for the potential technological application of giant Rashba systems.
*The STM works at Rutgers were supported by NSF Grant No. DMR-1506618. S.B.Z. was supported by the Department of Energy under Grant No. DE-SC0002623. D.W. was supported by NSF under Grant No. EFMA-1542789. The supercomputer time was provided by the CCNI at RPI and NERSC under DOE Contract No. DE-AC02-05CH11231. The single crystal synthesis works were supported by NSF under Grant No. DMR-1629059.
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Presenters
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Weida Wu
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
- Department of Physics and Astronomy, Rutgers University
- Physics and Astronomy, Rutgers University, New Brunswick
- Rutgers University, New Brunswick