Comparison of Capacitance-Voltage, Current-Voltage, and BEEM Measurements of Metal-Graphene-Semiconductor Schottky Barrier Heights

POSTER

Abstract

Capacitance-voltage, current-voltage, and ballistic electron emission microscopy (BEEM) measurements were performed to determine the Schottky Barrier Heights of Au/Si and Au/graphene/Si samples. In addition, measurements were performed on a commercial diode for reference. Data were acquired as a function of temperature, which indicate that the graphene had little effect upon the barrier heights that were measured.

Presenters

  • Hyeonseon Choi

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

Authors

  • Hyeonseon Choi

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Jack Rogers

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Steven Gassner

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Westly Nolting

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY

  • Vincent LaBella

    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Nanoscience, Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute
    • Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, NY