Evidence of resistive switching into a dynamical state in antiferromagnetic iridates
ORAL
Abstract
Resistive switching, which is targeted for antiferromagnetic (AFM) memory applications [1], has recently been observed in the AFM iridates Sr2IrO4 [2] and Sr3Ir2O7 [3, 4]. Here we demonstrate that the switching state at high electrical biases displays an increased noise pattern, which is indicative of a dynamical state at high biases. We employ a spectrum analyzer to characterize the noise pattern associated with the high-bias switching state and investigate the dependence of the noise spectrum on the magnitude of applied bias and magnetic field. The emergence of the noise was found to be strongly correlated with the onset of resistive switching. The noise power density displayed a 1/f2 frequency dependence with an amplitude mimicking the hysteretic behavior of the resistance switching. We argue that the observed noise spectrum could be associated with a random switching between different states and discuss various interpretations of its origin.
[1] V. Baltz et al. Rev. Mod. Phys. 90, 015005 (2018); [2] C. Wang et al. Phys. Rev. B 92, 115136 (2015); [3] H. Seinige et al. Phys. Rev. 94, 214434 (2016); [4] M. Williamson et al. Phys. Rev. B 97, 134431 (2018).
[1] V. Baltz et al. Rev. Mod. Phys. 90, 015005 (2018); [2] C. Wang et al. Phys. Rev. B 92, 115136 (2015); [3] H. Seinige et al. Phys. Rev. 94, 214434 (2016); [4] M. Williamson et al. Phys. Rev. B 97, 134431 (2018).
*This work was supported in part by NSF grants DMR-1712101 and DMR-1122603, and by KAUST Award No. OSR-2015-CRG4-2626.
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Presenters
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Morgan Williamson
- Department of Physics and Texas Materials Institute, University of Texas at Austin
- Physics Department and Texas Materials Institute, University of Texas at Austin