Pseudogap and electronic structure of electron-doped Sr<sub>2</sub>IrO<sub>4</sub>

ORAL

Abstract

We present [1] a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr2IrO4 upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure displays a strong momentum-space differentiation at low doping level: The Fermi surface consists of pockets centered around (π/2,π/2), while a pseudogap opens near (π,0). Its physical origin is shown to be related to short-range spin correlations. The pseudogap closes upon increasing doping, but a differentiated regime characterized by a modulation of the spectral intensity along the Fermi surface persists to higher doping levels. These results, obtained within the cellular dynamical mean-field-theory framework, are discussed in comparison to recent photoemission experiments and an overall good agreement is found.
[1] A. Moutenet, A. Georges, M. Ferrero, Phys. Rev. B 97, 155109 (2018)

*This work has been supported by the European Research Council grant ERC-319286-QMAC and the Swiss National Science Foundation (NCCR MARVEL). The Flatiron Institute is supported by the Simons Foundation.

Presenters

  • Alice Moutenet

    • CPhT, Ecole Polytechnique

Authors

  • Alice Moutenet

    • CPhT, Ecole Polytechnique
  • Antoine Georges

    • Collège de France
    • College de France
    • CCQ, Flatiron Institute, Simons Foundation
    • Center for Computational Quantum Physics, Flatiron Institue
    • Flatiron Institute - Simons Foundation, New York, USA
    • Center for Computational Quantum Physics, Flatiron Institute, NY, NY, 10010
    • CCQ, Flatiron Institute
    • Center for Computational Quantum Physics, Flatiron Institute
  • Michel Ferrero

    • CPhT, Ecole Polytechnique