Magneto-optical Kerr effect in two-dimensional diluted magnetic transition metal dichalcogenide semiconductors

ORAL

Abstract

In this talk, I will present a theory to model the Kerr angle for two-dimensional transition metal dichalcogenide semiconductors, such as MoS2, doped with a small density of magnetic atoms. The model Hamiltonian describes the band carriers within the effective gapped Dirac theory, accounting for spin-orbit and spin-valley coupling [1]. The magnetic impurities are described within a mean-field virtual crystal approximation, leading to a band-dependent spin splitting of the spectrum [2]. We find that the transverse optical susceptibility is non-zero, leading to a finite Kerr angle, when the exchange-induced splitting in the valence and conduction bands are different. We consider the case when there are no free carriers in the bands, as well as the n-doped and p-doped regimes.

[1] XIAO, D. et al. Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Physical Review Letters, v. 108, n. 19, p. 196802, 2012.

[2] FERNáNDEZ-ROSSIER, J. et al. Coherently photoinduced ferromagnetism in diluted magnetic semiconductors. Physical Review Letters, v. 93, n. 12, p. 127201, 2004.

*We acknowledge financial support from FCT for the P2020-PTDC/FIS- NAN/4662/2014 project. J. F.-R. acknowledges financial support from FCT for the UTAP-EXPL/NTec/0046/2017 project.

Presenters

  • Gonçalo Catarina

    • QuantaLab & Quantum Materials and Energy, International Iberian Nanotechnology Laboratory
    • QuantaLab, International Iberian Nanotechnology Laboratory

Authors

  • Gonçalo Catarina

    • QuantaLab & Quantum Materials and Energy, International Iberian Nanotechnology Laboratory
    • QuantaLab, International Iberian Nanotechnology Laboratory
  • Joaquin Fernandez-Rossier

    • International Iberian Nanotechnology Laboratory
    • QuantaLab, International Iberian Nanotechnology Laboratory
    • QuantaLab, International Iberian Nanotechnology Laboratory, Portugal
    • International Iberian Nanotechnology Laboratory (INL)