Interaction of Two-Dimensional Transition Metal Dichalcogenides on Different Substrates and Nanostructures
ORAL
Abstract
Two-dimensional transition metal dichalcogenides (2D TMDs) are 2D semiconductors that hold promise for a variety of optoelectronic devices, especially by harnessing the valley degree of freedom. Growth of 2D TMDs on different substrates and nanostructures provides enormous opportunities in engineering ultra-thin devices with tailored optical emission properties. We characterize the optical differences when the 2D TMD molybdenum disulfide (MoS2) is grown via chemical vapor deposition on the substrates silicon dioxide on silicon, gallium nitride (GaN), and silicon carbide (SiC). Changes in the spacing and relative intensity of the E12g and A1g Raman peaks suggest differences in the microstructure of the grown MoS2 or its interaction with the substrate. Additionally, we characterize the interaction between MoS2 and optical cavities patterned onto GaN and SiC. Preliminary results show brighter MoS2 exciton photoluminescence and shifted emission peaks on the optical cavities compared to the bulk substrate of each. We also show first results attempting to couple MoS2 emission to the resonant modes of these optical cavities.
*STC Center for Integrated Quantum Materials, NSF grant DMR-1231319.
The Center for Nanoscale Systems at Harvard University is supported under NSF grant ECCS-1541959.
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Presenters
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Andrew Greenspon
- John A. Paulson School of Engineering and Applied Sciences, Harvard University
- Harvard University