Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration
ORAL
Abstract
In this presentation we report on a process for electric-field assisted placement of nanomaterials from solution using large-scale graphene layers having patterned nanoscale deposition sites. The patterned graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed once nanomaterial deposition is completed, resulting in material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the universality of this approach, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Finally, we explore the scaling behavior of this approach for integration of high performance nanoelectronic devices.
*W.T.S. and M.C.H acknowledge support from the National Science Foundation (DMR-1505849)
–
Presenters
-
Mathias B Steiner
- IBM Research - Brazil