Carrier and epitaxial strain control of superconductivity in LaO thin film

ORAL

Abstract

We report effects of carrier density and epitaxial strain on superconductivity in rock-salt lanthanum monoxide (LaO) epitaxial thin film [1]. Electron carrier doping via introducing oxygen vacancies resulted in a dome-shaped Tc as a function of carrier density. In addition, epitaxial strain influenced significantly the Tc despite its highly symmetric rock-salt structure. Tc was raised up to 5.2 K in tensilely strained thin film on LaAlO3 substrate, in contrast with Tc of at most 4.5 K in compressive strained film on YAlO3 substrate. [1] K. Kaminaga et al., J. Am. Chem. Soc. 140, 6754 (2018).

*This work is supported by JST-CREST, JSPS-KAKENHI (Nos. 26105002, JP17J05331, 18H03872), the Mitsubishi Foundation, and Center for Spintronics Research Network (CSRN), Tohoku University.

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Presenters

  • Kenichi Kaminaga

    • WPI-AIMR, Tohoku Univ.

Authors

  • Kenichi Kaminaga

    • WPI-AIMR, Tohoku Univ.

  • Daichi Oka

    • Graduate School of Science, Tohoku Univ.

  • Tetsuya Hasegawa

    • Graduate School of Science, University of Tokyo

  • Tomoteru Fukumura

    • WPI-AIMR, Tohoku Univ.