Transport phenomena in epitaxial Al / InAs heterostructures with strong spin-orbit coupling in the presence of in-plane magnetic fields
ORAL
Abstract
Two-dimensional electron gas (2DEG) systems with strong spin-orbit coupling (SOC) and induced s-wave superconductivity are predicted to realize topological superconductivity when in the presence of in-plane magnetic fields. A major obstacle in studying these systems arises due to the tendency of magnetic fields to suppress superconductivity. By growing epitaxial aluminum on top of an InAs quantum well heterostructure, it is possible to create a high-transparency interface between the superconductor and the 2DEG. This interface results in induced superconductivity that is comparable with the true aluminum superconducting gap, thereby sustaining larger in-plane fields than achieved by ex situ aluminum deposition. Here, we discuss the devices that we have fabricated to explore this exciting system, as well as present initial millikelvin measurements studying Josephson phenomena in the presence of varying in-plane and perpendicular magnetic fields.
*The device fabrication and measurements are supported by the NSF DMR-1708688 and by the STC Center for Integrated Quantum Materials under NSF DMR-1231319. The material growth was supported by NSF-DMR-1836687.
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Presenters
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Michael Kosowsky
- Department of Physics, Harvard University
- Physics, Harvard University