Structural and Physical Properties of Ir<sub>3</sub>Sn<sub>7-x</sub>Mn<sub>x</sub> Single Crystals
ORAL
Abstract
Transition-metal stannides are known to exhibit strong d-p hybridization, leading to narrow - band gap semiconductors. We have successfully grown Ir3Sn7-xMnx single crystals using the flux method. Single crystal x-ray diffraction refinement indicates that Ir3Sn7-xMnx forms a cubic structure (space group Im3m), and the dopant Mn occupies the Sn site. For x = 0.1, the electrical resistivity shows metallic behavior and can be described by ρ = ρo + aT2 + bT between ~22 K and 300 K. An upturn is observed below 22 K, which is due to an antiferromagnetic (AFM) transition as reflected in the magnetization. Unexpectedly, the application of magnetic field results in negative magnetoresistance below the AFM transition. The effect of Mn doping will be discussed.
*This work is supported by the National GEM Consortium and the Department of Physics & Astronomy, LSU-BR
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Presenters
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Smita Speer
- Louisiana State University