Atomic Structure and Nano-Fracture Mechanics of Semiconductor-Oxide Interfaces Investigated by Transmission Electron Microscopy and Scanning Force Microscopy

ORAL

Abstract

Quantitative Information on interface adhesion and fracture resistance is of importance for electronic and MEMS/NEWS device manufacturing. Here we focus on Scanning Force Microscopy derived methods [1] which reveal the mechanical properties and fracture thresholds of oxide with respect to semiconductor interfaces like SiO2/Si and SiO2/SiC. Load/unload cycles i.e. force vs. distance curves reflect the effect of structural defects on interface strength under the influence of fluids solubilising and modifying surface/ interface layers [2]. Nanomechanic properties can be assessed at different time scales. Interface defects are characterized by complementary Microscopic and Spectroscopic Nanoanalysis using STEM and HR-TEM.

[1] Elastic modulus and fracture strength evaluation on the nanoscale by scanning force microscope experiments D M Jarzabek, et al., Nanotechnology (2014) DOI:10.1088/0957-4484/25/21/215701

[2] Influence of Alkali Ions on Tribological Properties of Silicon Surface, D M Jarzabek, et al., Tribol Lett (2015) DOI 10.1007/s11249-015-0603-5

*EU-CH Scientific Exchange Programme (No. 10.021), the European Social Fund and the
Nano-Argovia Grant of the Swiss Nanoscience Institute and the Canton Aargau of Switzerland are acknowledged.

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Presenters

  • Dipanwita Dutta

    • Paul Scherrer Institute

Authors

  • Dipanwita Dutta

    • Paul Scherrer Institute

  • Dariusz Jarzabek

    • Mechanics of Materials, Institute of Fundamental Technological Research, Polish Academy of Sciences

  • Helmut Schift

    • Paul Scherrer Institute

  • Zygmunt Rymuza

    • Micromechanics and Photonics, Warszaw University of Technology

  • Thomas Jung

    • Paul scherrer institute
    • Paul Scherrer Institute