Extreme asymmetry of 90-degree domain walls in multilayered films of (Ga,Mn)(As,P)

ORAL

Abstract

We image the magnetic domain structure during remagnetization of MBE grown multilayered films of a diluted magnetic semiconductor (Ga,Mn)(As,P) with digital modulations of the phosphorus concentration. The samples show two in-plane easy magnetization axes corresponding to the <100> cubic and [110] uniaxial anisotropies, typical for the GaMnAs system. Their remagnetization occurs in two steps through the nucleation and growth of 90-degree domains. Unexpectedly, the domain boundaries align precisely with the easy axes in contrast to our micromagnetic calculations using the measured magnetic parameters of the samples. We discuss how such totally asymmetric Neel domain walls can appear due to Dzyaloshinskii-Moriya interactions enhanced by the multiple sharp interfaces in the multilayered films.

*Magnetic characterization of the films at Argonne was supported by the U.S. Department of Energy, Office of Science, Materials Sciences and Engineering Division. Synthesis of the films at Notre Dame University was supported by the NSF Grant DMR14-00432.

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Presenters

  • Xinyu Liu

    • Department of Physics, University of Notre Dame

Authors

  • Vitalii Vlasko-Vlasov

    • Materials Sciences Division, Argonne National Laboratory
    • Argonne National Laboratory

  • Wai-Kwong Kwok

    • Argonne National Laboratory
    • Materials Science Division, Argonne National Laboratory
    • Material Science Division, Argonne National Laboratory
    • Materials Sciences Division, Argonne National Laboratory
    • Argonne National Lab

  • Sining Dong

    • Department of Physics, University of Notre Dame

  • Xinyu Liu

    • Department of Physics, University of Notre Dame

  • Malgorzata Dobrowolska

    • Department of Physics, University of Notre Dame

  • J K Furdyna

    • Department of Physics, University of Notre Dame