Design of Multi-chip Module with High Impedance Microwave Resonators for cQED Experiments with Si/SiGe Quantum Dots
ORAL
Abstract
Recent work coupling semiconductor qubits to resonators has shown that the use of high kinetic inductance resonators aids in the achievement of strong coupling [1]. We present the design of a multichip module consisting of a Si/SiGe quantum dot die bump-bonded to a TiN superconducting resonator die. This process allows for separate optimization of each circuit component. To increase the resonator impedance, we use TiN which allows for increased kinetic inductance in the superconducting film. Using finite element simulation of the 3D structure and experimentally extracted inductances we target a nominal design impedance of 250-400 ohms for a 100 nm thick film within constraints of the resonator fabrication.
[1] Samkharadze et al., Science 359, 1123 (2018).
[1] Samkharadze et al., Science 359, 1123 (2018).
*This work supported in part by the DOD under H98230-15-C0453, ARO (W911NF-17-1-0274), and the Vannevar Bush Faculty Fellowship program under ONR grant number N00014-15-1-0029. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the ARO or the U.S. Government. The U.S. Government is authorized to reproduce and distribute reprints for Government purposes notwithstanding any copyright notation herein.
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Presenters
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Nathan Holman
- Department of Physics, University of Wisconsin-Madison
- University of Wisconsin - Madison