Superconducting gatemon qubits based on selective-area-grown semiconductor materials
ORAL
Abstract
Semiconductor-superconductor hybrid gatemon qubits offer a promising path to large scale quantum processors. In contrast to conventional transmon qubits that are controlled using currents, gatemons allow complete control using only gate voltages [1], potentially alleviating challenges to scaling superconducting qubits [2]. Here, we present a novel approach to building gatemons utilizing selective-area-grown InAs structures on an InP substrate [3,4]. This approach allows deterministic placement and straightforward fabrication of the gatemon qubits. We characterize the material and perform first proof-of-principle measurements to demonstrate coherent qubit oscillations. Further work is needed to understand the dominant loss mechanisms and improve coherence times.
[1] Larsen et al., Phys. Rev. Lett. 115, 127001 (2015)
[2] Casparis et al., Nature Nanotechnology 13, 915–919 (2018)
[3] Krizek et al., Phys. Rev. Materials 2, 093401 (2018)
[4] Vaitiekenas et al., Phys. Rev. Lett. 121, 147701 (2018)
[1] Larsen et al., Phys. Rev. Lett. 115, 127001 (2015)
[2] Casparis et al., Nature Nanotechnology 13, 915–919 (2018)
[3] Krizek et al., Phys. Rev. Materials 2, 093401 (2018)
[4] Vaitiekenas et al., Phys. Rev. Lett. 121, 147701 (2018)
*This work was supported by Microsoft, the U.S. Army Research Office, and the Danish National Research Foundation.
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Presenters
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Albert Hertel
- Center for Quantum Devices, Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen
- Center for Quantum Devices, Niels Bohr Institute, Copenhagen