Two-band magnetoresistance in spin-filter CrVTiAl

ORAL

Abstract

Thin films of spin-filter material CrVTiAl were grown via sputtering, and their magnetotransport properties have been studied up to B=35 T. The resistivity vs T shows 2-channel semiconducting behavior with a disordered gapless channel and an activated gapped channel. Magnetoresistance measurements provide values for the mobilities of the two conducting channels, 900 and 50 cm2/Vs. This leads to a ratio of 18:1 for the effective masses, which corresponds to that predicted by density functional theory. Hall and magnetization measurements reveal a small moment saturating near 15 T that is assigned to partial non-compensation of the sublattices. These results combined with previous studies [1,2] show CrVTiAl to be a compensated ferrimagnet with a spin-polarized electronic structure.
[1] I. Galanakis, K. Ozdogan, and E. Sasioglu, J. Phys. Condens. Matter 26, 86003 (2014).
[2] G.M. Stephen, I. McDonald, B. Lejeune, L.H. Lewis, and D. Heiman, App. Phys. Lett. 109, 24 (2016).

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Presenters

  • Gregory Stephen

    • Department of Physics, Northeastern University
    • Northeastern University

Authors

  • Gregory Stephen

    • Department of Physics, Northeastern University
    • Northeastern University

  • Christopher Lane

    • Northeastern
    • Northeastern University

  • Ioana G Buda

    • Northeastern University

  • David E Graf

    • National High Magnetic Field Laboratory
    • National High Magnetic Field Lab, Tallahassee, FL
    • National High Magnetic Field Laboratory and Department of Physics, Florida State University
    • National High Magnetic Field Lab
    • NHMFL, Tallahassee, FL, United States
    • Florida State University
    • National High Magnetic Field Laboratory, Florida State University
    • NHMFL-FSU
    • National High Magnetic Field Laboratory and Florida State University
    • NHMFL

  • Stanislaw Kaprzyk

    • AGH University of Science and Technology

  • Bernardo Barbiellini

    • Physics, Lappeenranta University of Technology
    • Lappeenranta University of Technology
    • Department of Physics, School of Engineering Science, Lappeenranta University of Technology
    • Physics, School of Engineering Science, Lappeenranta University of Technology, Lappeenranta, Finland

  • Arun Bansil

    • Northeastern University
    • Department of Physics, Northeastern University

  • Donald E Heiman

    • Northeastern University