A novel Si/SiGe heterostructure for quantum dot spin qubits
ORAL
Abstract
Motivated by a desire to increase the energy splitting between the two low-lying valley states in a silicon quantum well, a Si/SiGe heterostructure is grown via UHV-CVD with a ~1 nm layer of SiGe buried ~2 nm beneath the upper interface of a silicon quantum well. High resolution STEM measurements confirm that this thin epitaxial layer is abrupt on the side facing the substrate and gradual on the side facing the surface. We report Shubnikov-de Haas and quantum Hall measurements, finding a transport mobility in excess of 100,000 cm2/(V s) at 6 x 1011 cm-2 carrier density and a series of stable oscillations in measurements of the longitudinal voltage as a function of magnetic field and carrier density (a fan diagram). We report both activation energy measurements in the quantum Hall regime and measurements of the excited state spectrum in gate-defined quantum dots fabricated in this material.
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Presenters
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Thomas McJunkin
- Department of Physics, University of Wisconsin-Madison
- University of Wisconsin - Madison