Gate-controlled charge-doping of a Mott insulator in Graphene/α-RuCl3 Heterostructures

ORAL

Abstract

The layered antiferromagnetic Mott insulator α-RuCl3 exhibits many phenomena consistent with the existence of a Kitaev quantum spin liquid. While most works on α-RuCl3 so far have focused on pristine bulk samples, this material can be readily exfoliated down to monolayer thicknesses. Here we study the electronic transport of van der Waals heterostructure devices containing thin a-RuCl3 flakes in contact with monolayer graphene Hall bars. We find an anomalously large conductivity implying the RuCl3 has become charge-doped and is now conducting. The Hall coefficient data show a sharp increase in the density of the second conducting band (in the a-RuCl3) as graphene is gated from hole- to electron-doped. Additionally, the resistivity at low temperature shows clear signals associated with magnetic phase transitions at temperatures 2-3 times higher than the native antiferromagnetic transition in a-RuCl3.

*We acknowledge support from the Institute of Materials Science and Engineering at Washington University in St. Louis. A portion of this work was supported under NSF DMR-1810305.

–

Presenters

  • Boyi Zhou

    • Washington University, St. Louis
    • Department of Physics, Washington University in St. Louis

Authors

  • Boyi Zhou

    • Washington University, St. Louis
    • Department of Physics, Washington University in St. Louis

  • Jesse Balgley

    • Washington University, St. Louis

  • Paula J Kelley

    • University of Tennessee (Knoxville, USA)
    • Oak Ridge National Lab
    • Oak Ridge National Laboratory

  • David George Mandrus

    • Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
    • University of Tennessee-Knoxville
    • Oak Ridge National Lab
    • Department of Materials Science and Engineering, University of Tennessee
    • University of Tennessee (Knoxville, USA)
    • Department of Materials Science and Engineering, University of Tennessee Knoxville
    • Department of Material Science & Engineering, University of Tennessee
    • Material Science and Engineering, University of Tennessee
    • Materials Science and Technology, Materials Science and Technology
    • University of Tennessee, Knoxville
    • Department of Materials Science and Engineering, The University of Tennessee
    • Materials Science and Engineering, The University of Tennessee
    • Oak Ridge National Laboratory
    • Department of Material Science and Engineering, University of Tennessee

  • Erik Henriksen

    • Department of Physics, Washington University in St. Louis, 1 Brookings Dr, St. Louis, MO 63130
    • Washington University in St. Louis
    • Washington Univ
    • Physics, Washington University, St. Louis
    • Washington University, St. Louis
    • Department of Physics, Washington University in St. Louis