Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe<sub>3</sub>GeTe<sub>2</sub>
ORAL
Abstract
The advent of two-dimensional van der Waals crystals creates new possibilities in developing novel spintronic devices. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 and CrI3 at low temperatures. Here, we developed a new device fabrication technique, and successfully isolated monolayers from layered metallic magnet Fe3GeTe2. We found that the itinerant ferromagnetism persists in Fe3GeTe2 down to monolayer. The ferromagnetic transition temperature, Tc, is suppressed in pristine Fe3GeTe2 thin flakes. An ionic gate, however, dramatically raises the Tc up to room temperature. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics.
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Presenters
Yujun Deng
Fudan University
Authors
Yujun Deng
Fudan University
Yijun Yu
Fudan University
Physics Department, Fudan University
Yichen Song
Fudan University
Jingzhao Zhang
The Chinese University of Hong Kong
Physics, The Chinese University of Hong Kong
Physics, The Chinese University of HongKong
Nai Zhou Wang
University of Science and Technology of China
Zeyuan Sun
Fudan University
Yangfan Yi
Fudan University
Yi Zheng Wu
Physics, Fudan university
Fudan University
Shiwei Wu
Fudan University
Department of Physics, Fudan University
Junyi Zhu
The Chinese University of Hong Kong
Physics, The Chinese University of Hong Kong
Physics, Chinese Univsity of Hong Kong
Physics, The Chinese University of HongKong
Jing Wang
State Key Laboratory of Surface Physics and Department of Physics, Fudan University
Fudan University
Xianhui Chen
University of Science and Technology of China
Department of physics, University of Science and Technology of China
Yuanbo Zhang
Fudan University
State Key Laboratory of Surface Physics and Department of Physics, Fudan University
Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China