Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe<sub>3</sub>GeTe<sub>2</sub>

ORAL

Abstract

The advent of two-dimensional van der Waals crystals creates new possibilities in developing novel spintronic devices. Recent experiments have demonstrated that it is possible to obtain two-dimensional ferromagnetic order in insulating Cr2Ge2Te6 and CrI3 at low temperatures. Here, we developed a new device fabrication technique, and successfully isolated monolayers from layered metallic magnet Fe3GeTe2. We found that the itinerant ferromagnetism persists in Fe3GeTe2 down to monolayer. The ferromagnetic transition temperature, Tc, is suppressed in pristine Fe3GeTe2 thin flakes. An ionic gate, however, dramatically raises the Tc up to room temperature. The gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2 opens up opportunities for potential voltage-controlled magnetoelectronics.

Presenters

  • Yujun Deng

    • Fudan University

Authors

  • Yujun Deng

    • Fudan University
  • Yijun Yu

    • Fudan University
    • Physics Department, Fudan University
  • Yichen Song

    • Fudan University
  • Jingzhao Zhang

    • The Chinese University of Hong Kong
    • Physics, The Chinese University of Hong Kong
    • Physics, The Chinese University of HongKong
  • Nai Zhou Wang

    • University of Science and Technology of China
  • Zeyuan Sun

    • Fudan University
  • Yangfan Yi

    • Fudan University
  • Yi Zheng Wu

    • Physics, Fudan university
    • Fudan University
  • Shiwei Wu

    • Fudan University
    • Department of Physics, Fudan University
  • Junyi Zhu

    • The Chinese University of Hong Kong
    • Physics, The Chinese University of Hong Kong
    • Physics, Chinese Univsity of Hong Kong
    • Physics, The Chinese University of HongKong
  • Jing Wang

    • State Key Laboratory of Surface Physics and Department of Physics, Fudan University
    • Fudan University
  • Xianhui Chen

    • University of Science and Technology of China
    • Department of physics, University of Science and Technology of China
  • Yuanbo Zhang

    • Fudan University
    • State Key Laboratory of Surface Physics and Department of Physics, Fudan University
    • Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
    • Dept. of Physics, Fudan University
    • Physics Department, Fudan University