Defects in Semiconductors -- Device Materials

Presentations

• First-principles calculations on dislocation-point defect interactions in Cu(In,Ga)Se₂ solar cell absorbers

  Invited

  March 4, 2019, 11:15 AM – March 4, 2019, 11:51 AM

  Presenters

  • Karsten Albe

    • FB Material- und Geowissenschaften, TU Darmstadt

  Authors

  • Karsten Albe

    • FB Material- und Geowissenschaften, TU Darmstadt

  • Daniel A. Barragan-Yani

    • FB Material- und Geowissenschaften, TU Darmstadt

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• Observation of Enormous Non-Linearities in the Output Electroluminescence Characteristics of Room-Temperature GaN-Based Microcavities

  ORAL

  March 4, 2019, 11:51 AM – March 4, 2019, 12:03 PM

  Presenters

  • Aniruddha Bhattacharya

    • Department of Electrical Engineering and Computer Science, University of Michigan at Ann Arbor

  Authors

  • Aniruddha Bhattacharya

    • Department of Electrical Engineering and Computer Science, University of Michigan at Ann Arbor

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• The Near-Surface Electrostatic Environment of n-Doped Silicon Probed with a Moveable Dangling Bond Point Probe

  ORAL

  March 4, 2019, 12:03 PM – March 4, 2019, 12:15 PM

  Presenters

  • Taleana Huff

    • Physics, University of Alberta

  Authors

  • Taleana Huff

    • Physics, University of Alberta

  • Thomas Dienel

    • Physics, University of Alberta

  • Mohammad Rashidi

    • University of Alberta
    • Physics, University of Alberta

  • Roshan Achal

    • University of Alberta
    • Physics, University of Alberta

  • wyatt vine

    • Physics, University of Alberta

  • Robert A Wolkow

    • University of Alberta
    • Physics, University of Alberta

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• Extinction of Random Telegraph Switching by “Cryogenic Annealing” in Small Area Si MOS Transistors

  ORAL

  March 4, 2019, 12:15 PM – March 4, 2019, 12:27 PM

  Presenters

  • Mark Lee

    • University of Texas at Dallas

  Authors

  • Gangyi Hu

    • University of Texas at Dallas

  • Mark Lee

    • University of Texas at Dallas

  • Hisashi Shichijo

    • University of Texas at Dallas

  • Clint A Naquin

    • Texas Instruments, Inc.

  • Hal Edwards

    • Texas Instruments, Inc.

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• Hyperdoping silicon for intermediate band photoconductivity

  ORAL

  March 4, 2019, 12:27 PM – March 4, 2019, 12:39 PM

  Presenters

  • Yining Liu

    • Department of Electro-Optics and Photonics, University of Dayton

  Authors

  • Yining Liu

    • Department of Electro-Optics and Photonics, University of Dayton

  • Shao Qi Lim

    • Research School of Physics and Engineering, Australia National University

  • Wenjie Yang

    • Research School of Physics and Engineering, Australia National University

  • Phillippe K Chow

    • US Army ARDEC-Benet Labs

  • Imad Agha

    • Department of Physics, University of Dayton

  • James S Williams

    • Research School of Physics and Engineering, Australia National University

  • Jeffrey M Warrender

    • US Army ARDEC-Benet Labs

  • Jay Mathews

    • Department of Physics, University of Dayton

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• The evolution of atomic structure and chemical states of ultra-low energy high-dose Boron implanted Si via UV laser annealing

  ORAL

  March 4, 2019, 12:39 PM – March 4, 2019, 12:51 PM

  Presenters

  • Kuang Yao Lo

    • National Cheng Kung University
    • Physics, National Cheng Kung University, Taiwan

  Authors

  • Kuang Yao Lo

    • National Cheng Kung University
    • Physics, National Cheng Kung University, Taiwan

  • Fu-Ying Lee

    • Physics, National Cheng Kung University, Taiwan

  • Zong-Zhe Wu

    • National Cheng Kung University
    • Physics, National Cheng Kung University, Taiwan

  • Li-Chi Kao

    • Physics, National Cheng Kung University, Taiwan

  • Feng-Ming Chang

    • National Cheng Kung University
    • Physics, National Cheng Kung University, Taiwan

  • Yu-Ming Chang

    • National Taiwan University
    • Center for Condensed Matter Sciences, National Taiwan University
    • Center for Condensed Matter Sciences, National Taiwan University, Taiwan

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• Defect studies in Ge and GeSn thin films grown on Si

  ORAL

  March 4, 2019, 12:51 PM – March 4, 2019, 1:03 PM

  Presenters

  • Christina Scott

    • Department of Physics, University of Dayton

  Authors

  • Christina Scott

    • Department of Physics, University of Dayton

  • Imad Agha

    • Department of Physics, University of Dayton

  • Jay Mathews

    • Department of Physics, University of Dayton

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• Crystal growth, electronic structure and optical properties of BaZrS₃ and its Ruddlesden-Popper phases

  ORAL

  March 4, 2019, 1:03 PM – March 4, 2019, 1:15 PM

  Presenters

  • Shanyuan Niu

    • Mork Family Department of Chemical Engineering and Materials Science, University of Southern California
    • Department of Chemical Engineering and Materials Science, University of Southern California

  Authors

  • Shanyuan Niu

    • Mork Family Department of Chemical Engineering and Materials Science, University of Southern California
    • Department of Chemical Engineering and Materials Science, University of Southern California

  • Kristopher Williams

    • Department of Chemical Engineering, Massachusetts Institute of Technology
    • Massachusetts Institute of Technology

  • Wei Li

    • Department of Materials Science and Engineering, University of Delaware

  • Debarghya Sarkar

    • Ming Hsieh Department of Electrical Engineering, University of Southern California

  • Fei Hou

    • School of Materials Science and Engineering, University of New South Wales

  • Boyang Zhao

    • Mork Family Department of Chemical Engineering and Materials Science, University of Southern California

  • Kevin Ye

    • Department of Materials Science and Engineering, Massachusetts Institute of Technology

  • Elisabeth Bianco

    • Materials and Manufacturing Directorate, Air Force Research Laboratory

  • Michael E McConney

    • Materials and Manufacturing Directorate, Air Force Research Laboratory

  • Ralf Haiges

    • Loker Hydrocarbon Research Institute and Department of Chemistry, University of Southern California

  • David Singh

    • University of Missouri
    • Physics, University of Missouri
    • University of Missouri-Columbia
    • University of missouri
    • Department of Physics and Astronomy, University of Missouri

  • Jan Seidel

    • School of Materials Science and Engineering, University of New South Wales

  • Rafael Jaramillo

    • Massachusetts Institute of Technology
    • Department of Materials Science and Engineering, Massachusetts Institute of Technology

  • Rehan Kapadia

    • Ming Hsieh Department of Electrical Engineering, University of Southern California

  • William A Tisdale

    • Chemical Engineering, Massachusetts Institute of Technology (MIT)
    • Department of Chemical Engineering, Massachusetts Institute of Technology
    • Massachusetts Institute of Technology

  • Anderson Janotti

    • Department of Material science and Engineering, University of Delaware
    • Department of Physics & Astronomy, University of Delaware
    • Materials Science and Engineering, University of Delaware
    • University of Delaware
    • Department of Materials Science & Engineering, University of Delaware
    • Department of Materials Science and Engineering, University of Delaware

  • Jayakanth Ravichandran

    • Mork Family Department of Chemical Engineering and Materials Science, University of Southern California
    • Department of Chemical Engineering and Materials Science, University of Southern California

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• ABSTRACT WITHDRAWN

  COFFEE_KLATCH

  March 4, 2019, 1:15 PM – March 4, 2019, 1:27 PM

  View abstract →

• Point defects and dopants of boron arsenide from first-principles calculations: donor compensation and doping asymmetry

  ORAL

  March 4, 2019, 1:27 PM – March 4, 2019, 1:39 PM

  Presenters

  • Sieun Chae

    • University of Michigan

  Authors

  • Sieun Chae

    • University of Michigan

  • Kelsey Mengle

    • Materials Science and Engineering, University of Michigan
    • University of Michigan

  • John Heron

    • Materials Science and Engineering, University of Michigan
    • Department of Materials Science and Engineering, University of Michigan, Ann Arbor
    • University of Michigan

  • Emmanouil Kioupakis

    • University of Michigan
    • Materials Science and Engineering, University of Michigan
    • Material Science and Engineering, University of Michigan, Ann Arbor

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• Effect of substitutional defects on the thermal conductivity of boron arsenide

  ORAL

  March 4, 2019, 1:39 PM – March 4, 2019, 1:51 PM

  Presenters

  • Nakib Protik

    • Physics, Boston College

  Authors

  • Nakib Protik

    • Physics, Boston College

  • Mauro Fava

    • LITEN, CEA-Grenoble

  • Natalio Mingo

    • LITEN, CEA-Grenoble

  • Jesús Carrete

    • Institute of Materials Chemistry, Technical University of Vienna

  • Georg Madsen

    • Institute of Materials Chemistry, Technical University of Vienna

  • Navaneetha Krishnan Ravichandran

    • Physics, Boston College

  • David A Broido

    • Boston College
    • Boston Coll
    • Physics, Boston College

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• Beyond diffusion limit defect imaging and independent determination of the spatial profiles of electron and hole density near a dislocation defect by combining Raman and photoluminescence (PL) imaging

  ORAL

  March 4, 2019, 1:51 PM – March 4, 2019, 2:03 PM

  Presenters

  • Yong Zhang

    • University of North Carolina at Charlotte

  Authors

  • Chang-Kui Hu

    • University of North Carolina at Charlotte and Wuhan University of Technology
    • Wuhan University of Technology

  • Qiong Chen

    • University of North Carolina at Charlotte

  • Fengxiang chen

    • University of North Carolina at Charlotte and Wuhan University of Technology

  • Timothy Hurley Gfroerer

    • Davidson College

  • Mark W Wanlass

    • National Renewable Energy Laboratory

  • Yong Zhang

    • University of North Carolina at Charlotte

  View abstract →