Electrical and Magnetic Properties of Layered CaMn<sub>2</sub>Bi<sub>2</sub>
ORAL
Abstract
CaMn2Bi2 forms a hexagonal structure, consisting of alternately stacked Ca and Mn2Bi2 layers. Instead of ferromagnetic ordering seen in MnBi, CaMn2Bi2 orders antiferromagnetically below TN ~ 150 K, as reflected in the magnetization, specific heat, and electrical resistivity. Although it is considered as a narrow-gap semiconductor, our resistivity shows metallic behavior with a sharp drop at TN and a little bump at Tb ~ 20 K. Below Tb, large positive magnetoresistance with non-monotonic field dependence is observed in all current and magnetic field configurations. Its possible origin will be discussed.
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Presenters
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Joanna Blawat
- Physics and Astronomy, Louisiana State University