Thermoelectric Effects in a Double Mushroom Phase Change Memory Cell

ORAL

Abstract

Phase change memory (PCM) is a non-volatile memory that uses crystalline (set) and amorphous (reset) states to hold information. We use a finite-element PCM model1,2 to demonstrate thermoelectric effects in a cell with a novel “double mushroom” geometry. We analyze the impact of thermoelectric power (Peltier and Thomson heating) on device performance. We also compare the double and single mushroom cell write (reset and set) requirements and find better performance in the double mushroom due to enhanced thermal isolation.

1 Z. Woods and A. Gokirmak, IEEE Trans. Electron Devices 64, 4466 (2017).
2 Z. Woods, S. Jake, C. Adam, A. L’Hacene, and A. Gokirmak, IEEE Trans. Electron Devices 64, 4472 (2017).

*NSF REU EEC 1560098

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Presenters

  • Noah Del Coro

    • Electrical Engineering and Computer Science and Engineering, University of Connecticut

Authors

  • Noah Del Coro

    • Electrical Engineering and Computer Science and Engineering, University of Connecticut

  • Jake Scoggin

    • University of Connecticut
    • ECE, UConn
    • Electrical and Computer Engineering, University of Connecticut

  • Ali Gokirmak

    • Electrical and Computer Engineering, University of Connecticut, Storrs, CT 06269, USA
    • University of Connecticut
    • ECE, UConn
    • Electrical and Computer Engineering, University of Connecticut