Metal-Insulator Transition and High Temperature Charge Density Waves in monolayer VSe<sub>2</sub>
ORAL
Abstract
Although emergent phenomena driven by electronic reconstructions in oxide heterostructures have been intensively discussed, such interface-driven phenomena in shaping the electronic properties has not been well established in van der Waals heterointerfaces. By diminishing the material thickness and forming a heterointerface, we observed two types of charge-ordering transitions in monolayer VSe2 on graphene substrates. Comprehensive combination of ARPES, STM, and renormalization group analysis enable us to reveal the low-dimensionality and the heterointerface play important roles in enhancing charge density wave temperature to 350 K contrasted to the 105 K in bulk VSe2 and in driving the unexpected metal-insulator transition at 135 K in the family of monolayered transition metal dichalcogenides. We will discuss implications of our observations in comparison with the similar results reported by two other groups.
*This work is published in Nano Letters 18, 5432 (2018). This work was supported by the Korean government (No. NRF-2009-0093818, NRF-2014R1A4A1071686, NRF-2015R1D1A1A01057271, NRF-2017R1C1B2004927, NRF-2015R1C1A1A01051629, No. 2011-0030046, and Grant No. IBS-R009-G1). The ALS is supported by the U.S. DOE under Contract No. DE-AC02- 05CH11231.
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Presenters
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Young Jun Chang
- University of Seoul
- Physics, University of Seoul, Korea