Effect of current annealing to the transport properties of CVD graphene cooled with a biased gate voltage
ORAL
Abstract
Chemical vapor deposition of graphene is an excellent method for obtaining large area single-layer graphene. A topic of interest in this area is to characterize and reduce the impurity level in this material. In this experimental work, we investigate impurity effects on electron /hole transport in a graphene specimen by cooling down a graphene Hall bar device under different gate bias voltages. Further, we examine the impact of current annealing on the transport characteristics. Here we present results from the measurements carried out in a closed cycle refrigerator out over a broad temperature range (295Kâ15K), focusing on the charge neutrality point.
*This work was supported by National Science Foundation (Grant No: ECCS 1710302), U.S. Department of Energy (Grant No. DE-SC0001762), Army Research Office (Grant No: W911NF-14-2-0076 and W911NF-15-1-0433)
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Presenters
U. Kushan Wijewardena
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Authors
U. Kushan Wijewardena
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Tharanga Nanayakkara
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Rasanga Samaraweera
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Binuka Gunawardana
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
C. Rasadi Munasinghe
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Sajith Withanage
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Georgia State University
Annika Kriisa
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Georgia State University
Department of Physics and Astronomy, Georgia State University
Physics & Astronomy, Georgia State University
Ramesh Mani
Physics and Astronomy, Georgia State University
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA
Georgia State University
Department of Physics and Astronomy, Georgia State University