Gate voltage tunable superconductivity in low-carrier-density SrTiO<sub>3</sub>
ORAL
Abstract
We demonstrate gate voltage control of the critical current of a surface channel of the low-carrier-density, bulk-superconducting oxide system SrTiO3. The devices are in a conventional field effect transistor geometry with a solid gate dielectric and superconducting leads. We can modulate the critical current by a factor of 2-3 in our devices as a function of gate voltage. Additionally, we study the magnetic field dependence of the differential resistance of these devices to understand the role the superconducting leads play on the channel properties. A device such as this could serve as a new qubit architecture when integrated into a microwave resonator circuit.
*We acknowledge support of the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES), Materials Sciences and Engineering Division. The use of facilities at the Center for Nanoscale Materials was supported by the U.S. DOE, BES under Contract No. DE-AC02-06CH11357. The NHMFL is supported by NSF/DMR-1644779 and the State of Florida.
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Presenters
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Terence Bretz-Sullivan
- Materials Science Division, Argonne National Laboratory
- Argonne National Laboratory