High-Impedance Titanium Nitride Resonators via Atomic Layer Deposition
ORAL
Abstract
High-impedance resonators provide the opportunity to achieve ultra-strong coupling in superconducting qubits, strong coupling in hybrid systems, and highly compact multi-modal systems. The use of materials with a large kinetic inductance, like titanium nitride (TiN), allow one to realize high-impedance resonators using thin films. Atomic Layer Deposition (ALD) allows for atomic precision in film thickness on a wafer scale, a necessity for precise device fabrication in thin films. Here we present results of using ALD of TiN to realize thin films (thicknesses ∼ 8 nm) and high-impedance resonators (Zchar ≥ 1kΩ). We will discuss quality factor measurements and other applications of these highly inductive TiN thin films.
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Presenters
Abigail Shearrow
Univ of Chicago
Authors
Abigail Shearrow
Univ of Chicago
Nathan Earnest
Univ of Chicago
James Franck Institute and Department of Physics, University of Chicago
James Franck Institute, University of Chicago
Physics, University of Chicago
Helin Zhang
Univ of Chicago
Samuel Whiteley
Univ of Chicago
Institute for Molecular Engineering, University of Chicago
University of Chicago
Srivatsan Chakram
Univ of Chicago
James Franck Institute and Department of Physics, University of Chicago
James Franck Institute, University of Chicago
Physics, University of Chicago
Erik Shirokoff
Univ of Chicago
David Awschalom
Univ of Chicago
Institute for Molecular Engineering, University of Chicago
University of Chicago
David Schuster
Univ of Chicago
Physics, Univ of Chicago
James Franck Institute and Department of Physics, University of Chicago
University of Chciago
Physics, University of Chicago
Institute for Molecular Engineering, University of Chicago
