Structural, electronic, ferroelectric, and topological properties of SnTe from atomic layer to bulk
ORAL
Abstract
In this talk, motivated from the recent experiment [1] and theory [2,3,4], I will discuss the structural parameters, elastic energy barrier, electronic structure, and electric polarization for 2 to 40 atomic layers (ALs) of SnTe thin films, as obtained from DFT calculations. At 40 ALs, SnTe films transit from semiconductor to a topological phase, with an in-plane electric polarization vanishing. The AB phase found to be stable up to 6 atomic layers and AA phase takes over thereafter. In this talk, I will also present simulated and experimental STM images of 2 AL SnTe films with/without defects.
References
[1] K. Chang, et al., Science 353, 274 (2016).
[2] M. Mehboudi, et al., Nano Lett. 16, 1704 (2016).
[3] M. Mehboudi, et al., Phys. Rev. Lett. 117, 246802 (2016).
[4] S. Barraza-Lopez, et al., arXiv:1709.04581.
References
[1] K. Chang, et al., Science 353, 274 (2016).
[2] M. Mehboudi, et al., Nano Lett. 16, 1704 (2016).
[3] M. Mehboudi, et al., Phys. Rev. Lett. 117, 246802 (2016).
[4] S. Barraza-Lopez, et al., arXiv:1709.04581.
*T.P.K. and S.B.-L. were funded by the U.S. DOE (Grant No. DESC0016139), K.C. was supported by National Natural Science Foundation of China (Grant No. 51561145005) and Ministry of Science and Technology of China (Grant No. 2016YFA0301002). K.C. and S.S.P.P are funded by the Deutsche Forschungsgemeinschaft
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Presenters
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Thaneshwor Kaloni
- Univ of Arkansas-Fayetteville
- Department of Physics, University of Arkansas