High room-temperature electron mobility in hybrid MBE-grown La-doped SrSnO<sub>3</sub> films
ORAL
Abstract
Strain-engineered, phase-pure, epitaxial, and stoichiometric La-doped SrSnO3 films were grown using hybrid molecular beam epitaxy on LaAlO3 (001) and GdScO3 (110) substrates. High room-temperature electron mobility of 61 cm2V-1s-1 was achieved on GdScO3 at a carrier concentration of 7×1019 cm-3, with still room for improved with proper control over structure and doping. Through systematic study of temperature-dependent electronic and magneto-transport behavior, we will show that substrate-induced dislocations can have a strong influence on the electron phase coherence length resulting in a dimensionality crossover from 2D to 3D weak localization. We will then demonstrate that growth-induced cation non-stoichiometry results in a crossover from weak to strong localization of electronic carriers in La-doped SrSnO3 films on LaAlO3. Finally, we will discuss the correlations between electronic transport mechanisms and structural defects associated with cation non-stoichiometry and dislocations.
*This work is primarily supported by NSF grants DMR-1741801, DMR-1607318, and DMR-1410888
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Presenters
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Abhinav Prakash
- Chemical Engineering and Materials Science, University of Minnesota
- Chemical Engineering & Materials Science, University of Minnesota