Field Effect in Top-gated Devices Based on NdTiO<sub>3</sub>/SrTiO<sub>3</sub> Heterointerfaces
POSTER
Abstract
The interface between a Mott insulator, RTiO3 (where R is a rare-earth element), and SrTiO3 hosts an ultra-high density two-dimension electron gas, which can display a broad range of correlated electron phenomena, ranging from magnetism to superconductivity. Due to the dielectric constant of SrTiO3, up to ~30,000 at low temperatures, the use of SrTiO3 as a top-gate dielectric is expected to provide new opportunities for locally tuning the very large electron densities which are present in complex oxide interface devices. We discuss the fabrication and electrical measurements of top-gated Hall bars based on hybrid MBE-grown NdTiO3/SrTiO3 heterostructures.
*This work is supported in part by the Office of Naval Research and the National Science Foundation.
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Presenters
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Xinxin Cai
- School of Physics and Astronomy, University of Minnesota
- Pennsylvania State Univ
- Univ of Minnesota - Twin Cities